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PBLS4005V Datasheet(PDF) 5 Page - Nexperia B.V. All rights reserved |
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PBLS4005V Datasheet(HTML) 5 Page - Nexperia B.V. All rights reserved |
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5 / 12 page  PBLS4005Y_PBLS4005V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 16 February 2009 4 of 11 NXP Semiconductors PBLS4005Y; PBLS4005V 40 V PNP BISS loadswitch 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. Table 8. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit TR1; PNP low VCEsat transistor ICBO collector-base cut-off current VCB = −40 V; IE =0A - - −100 nA VCB = −40 V; IE =0A; Tj = 150 °C -- −50 µA IEBO emitter-base cut-off current VEB = −5 V; IC =0A - - −100 nA hFE DC current gain VCE = −2 V; IC = −10 mA 200 - - VCE = −2 V; IC = −100 mA [1] 150 - - VCE = −2 V; IC = −500 mA [1] 40 - - VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA - - −50 mV IC = −100 mA; IB = −5mA - - −130 mV IC = −200 mA; IB = −10 mA - - −200 mV IC = −500 mA; IB = −50 mA [1] -- −350 mV RCEsat collector-emitter saturation resistance IC = −500 mA; IB = −50 mA [1] - 440 700 m Ω VBEsat base-emitter saturation voltage IC = −500 mA; IB = −50 mA [1] -- −1.2 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −100 mA [1] -- −1.1 V fT transition frequency IC = −100 mA; VCE = −5V; f = 100 MHz 100 300 - MHz Cc collector capacitance VCB = −10 V; IE =ie =0A; f=1MHz --10 pF TR2; NPN resistor-equipped transistor ICBO collector-base cut-off current VCB =50V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE =30V; IB = 0 A --1 µA VCE =30V; IB =0A; Tj = 150 °C --50 µA IEBO emitter-base cut-off current VEB =5V; IC = 0 A --90 µA hFE DC current gain VCE =5V; IC = 5 mA 80 - - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV VI(off) off-state input voltage VCE =5V; IC = 100 µA - 1.2 0.8 V VI(on) on-state input voltage VCE = 0.3 V; IC =5mA 3 1.6 - V R1 bias resistor 1 (input) 33 47 61 k Ω R2/R1 bias resistor ratio 0.8 1 1.2 Cc collector capacitance VCB =10V; IE =ie =0A; f=1MHz - - 2.5 pF |
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