PBLS6002D_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 7 September 2009

6 of 16

NXP Semiconductors

PBLS6002D

60 V PNP BISS loadswitch

7.

Characteristics

Ceramic PCB, Al2O3, standard footprint

Fig 4.

TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time;

typical values

006aaa464

10

1

102

103

Zth(j-a)

(K/W)

10−5

10

10−2

10−4

102

10−1

tp (s)

10−3

103

1

0.75

0.5

0.33

0.2

0.1

δ = 1

0.05

0.02

0.01

0

Table 7.

Characteristics

Tamb = 25 °C unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR1; PNP low VCEsat transistor

ICBO

collector-base cut-off

current

VCB = −60 V; IE =0A

-

-

−100 nA

VCB = −60 V; IE =0A;

Tj = 150 °C

--

−50

µA

ICES

collector-emitter cut-off

current

VCE = −60 V; VBE =0V

-

-

−100 nA

IEBO

emitter-base cut-off current VEB = −5 V; IC =0A

-

-

−100 nA

hFE

DC current gain

VCE = −5 V; IC = −1 mA

200

350

-

VCE = −5V;

IC = −500 mA

[1] 150

230

-

VCE = −5V;

IC = −1000 mA

[1] 100

160

-

VCEsat

collector-emitter saturation

voltage

IC = −100 mA;

IB = −1mA

-

−110 −175 mV

IC = −500 mA;

IB = −50 mA

[1] -

−135 −180 mV

IC = −1000 mA;

IB = −100 mA

[1] -

−255 −340 mV

RCEsat

collector-emitter saturation

resistance

IC = −1A;

IB = −100 mA

[1] -

255

340

m

Ω

VBEsat

base-emitter saturation

voltage

IC = −1 A; IB = −50 mA

[1] -

−0.95 −1.1

V