PDTC114TS datasheet(5/11 Pages) NEXPERIA

5 / 11 page

PDTC114T_SER_8

Product data sheet

Rev. 08 — 9 February 2006

5 of 11

Philips Semiconductors

PDTC114T series

NPN resistor-equipped transistors; R1 = 10 k

Ω, R2 = open

Characteristics

Table 8:

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB =50V; IE = 0 A

100

ICEO

collector-emitter

cut-off current

VCE =30V; IB =0A

µA

VCE =30V; IB =0A;

Tj = 150 °C

µA

IEBO

emitter-base cut-off

current

VEB =5V; IC = 0 A

100

hFE

DC current gain

VCE =5V; IC = 1 mA

200

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA

150

bias resistor 1 (input)

Ω

collector capacitance

VCB =10V; IE =ie =0A;

f=1MHz

2.5

VCE =5V

(1) Tamb = 150 °C

(2) Tamb =25 °C

(3) Tamb = −40 °C

IC/IB =20

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −40 °C

Fig 1.

DC current gain as a function of collector

current; typical values

Fig 2.

Collector-emitter saturation voltage as a

function of collector current; typical values

006aaa552

200

400

600

hFE

IC (mA)

10−1

102

(1)

(2)

(3)

006aaa553

IC (mA)

10−1

102

10−1

VCEsat

(V)

10−2

(1)

(2)

(3)

PDTC114TS Datasheet(PDF) 5 Page - Nexperia B.V. All rights reserved

PDTC114TS Datasheet(HTML) 5 Page - Nexperia B.V. All rights reserved

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Download

Link URL