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SMC50J100A Datasheet(PDF) 4 Page - STMicroelectronics |
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SMC50J100A Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 12 page ![]() 1.1 Characteristics (curves) Figure 3. Maximum peak power dissipation versus initial junction temperature 0 1000 2000 3000 4000 5000 6000 0 25 50 75 100 125 150 175 200 PPP(W) Tj (°C) 10/1000 µs VBR ≥ 36V VBR < 36V Figure 4. Maximum peak pulse power versus exponential pulse duration 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 PPP(kW) tp(ms) Tj initial = 25 °C Figure 5. Maximum peak pulse current versus clamping voltage 0.1 1 10 100 1000 10000 1 10 100 1000 Ipp (A) VCL (V) 8/20 µs 10/1000 µs Figure 6. Dynamic resistance versus pulse duration 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 RD(Ω) tp (ms) SMC50J5.0A SMC50J36A SMC50J70A SMC50J100A Figure 7. Junction capacitance versus reverse applied voltage (unidirectional type) 0.1 1 10 100 1 10 100 1000 C(nF) V R(V) SMC50J5.0A SMC50J70A f=1MHz Vosc=30mVRMS Tj=25°C SMC50J36A SMC50J100A Figure 8. Leakage current versus junction temperature 1 10 100 1000 10000 100000 25 50 75 100 125 150 175 IR (nA) Tj (°C) VR=VRM VRM < 10V VRM ≥ 10V SMC50JxxA Characteristics (curves) DS13862 - Rev 1 page 4/12 |
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