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2N7002AX Datasheet(PDF) 2 Page - Diodes Incorporated

Part # 2N7002AX
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  5 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

2N7002AX Datasheet(HTML) 2 Page - Diodes Incorporated

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2N7002AX
Document number: DS36549 Rev. 3 - 3
2 of 5
www.diodes.com
January 2015
© Diodes Incorporated
2N7002AX
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
TA = +25°C
TA = +85°C
TA = +100°C
ID
180
130
115
mA
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +85°C
TA = +100°C
ID
200
160
140
mA
Maximum Continuous Body Diode Forward Current (Note 6)
IS
0.5
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
700
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation
(Note 5)
PD
314
mW
(Note 6)
463
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
400
°C/W
(Note 6)
272
Thermal Resistance, Junction to Case
(Note 6)
RθJC
100
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
60
⎯
⎯
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
1.0
µA
VDS = 60V, VGS = 0V
Gate-Body Leakage
IGSS
⎯
⎯
±10
µA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
1.2
⎯
2.0
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)
⎯
⎯
6
Ω
VGS = 5V, ID = 0.115A
Forward Transconductance
gFS
80
⎯
⎯
mS
VDS = 10V, ID = 0.115A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
⎯
26.5
⎯
pF
VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance
Coss
⎯
2.2
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
1.7
⎯
pF
SWITCHING CHARACTERISTICS (Note 8)
Turn-On Delay Time
tD(ON)
⎯
2.3
⎯
ns
VDD = 30V, ID = 0.115A, RL = 150Ω,
VGEN = 10V, RGEN = 25Ω
Turn-Off Delay Time
tD(OFF)
⎯
10.8
⎯
ns
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.



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