Rev 1.0

02/09/17

Bipolar Medium Power Transistor in bare die form

Complement to PNP TIP41C

NPN Transistor Bare Die, TIP42C

Features:

Die Dimensions in µm (mils)

2286 (99)



Collector current up to 6A



High switching speed



Improved hFE linearity



Solderable back metal



High Reliability tested grades for Military + Space

Ordering Information:

The following part suffixes apply:



No suffix - Commercial grade die



“H” – Hi-rel grade die + MIL-STD-38534 Class H LAT



“K” – Hi-rel grade die + MIL-STD-38534 Class K LAT.

LAT = Lot acceptance Test.

For information on Hi-Rel LAT flows please see below.

www.siliconsupplies.com\bare-die-lot-qualification

DIE BACK = COLLECTOR

Supply Formats:

Mechanical Specification



Default – Die in Waffle Pack (100 per tray capacity)



Sawn Wafer on Tape – Specific request



Unsawn Wafer – Specific request



With additional electrical selection – Specific request



Sawn as pairs or adjacent pair pick – Specific request

Die Size

(Excluding Saw Street)

2286 x 2032

99 x 80

µm

mils

Base Pad Size

Emitter Pad Size

12.5 x 42

13 x 48

mils

Die Thickness

318 (±25)

12.5 (±1)

µm

mils

Top Metal Composition

Al

Back Metal Composition

Ti/Ni/Ag

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