CEP6040SL/CEB6040SL

Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Threshold Voltage

Static Drain-Source

On-Resistance

BVDSS

IDSS

IGSSR

IGSSF

4.6

3.8

1

3

-100

100

1

mW

V

nA

nA

µ

A

V

2

Gate Body Leakage Current, Reverse

On Characteristics b

Dynamic Characteristics c

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching Characteristics c

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage b

Test Condition

VGS = 0V, ID = 250µA

VGS(th)

RDS(on)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

IS

VSD

Typ

Max

65

VDS = 65V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 20A

VDD = 30V, ID = 20A,

VGS =10V, RGEN = 25W

VDS = 30V, ID = 20A,

VGS = 4.5V

VDS = 30V, VGS = 0V,

f = 1.0 MHz

VGS = 0V, IS = 20A

1790

725

15

22

28

143

90

26

4

15

83

1.2

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

7.7

5.9

mW

VGS = 4.5V, ID = 20A

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.L =10mH, IAS =4A, VDD = 24V, RG = 25W, Starting TJ = 25 C