Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Forward Transconductance

Gate Threshold Voltage

Static Drain-Source

On-Resistance

BVDSS

IDSS

IGSSR

IGSSF

0.150

2

4

-100

100

25

Ω

V

nA

nA

µ

A

V

S

2

Gate Body Leakage Current, Reverse

On Characteristics b

Dynamic Characteristics c

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching Characteristics c

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage b

Test Condition

VGS = 0V, ID = 250µA

VGS(th)

RDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

IS f

VSD

Typ

Max

200

VDS = 160V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 10A

VDS = 10V, ID = 9A

VDD = 100V, ID = 11A,

VGS = 10V, RGEN = 9.1Ω

VDS = 160V, ID = 19A,

VGS = 10V

VDS = 25V, VGS = 0V,

f = 1.0 MHz

VGS = 0V, IS = 19A g

1955

355

55

21

5

66

11

42

10

132

22

44

8

14

57

19

1.5

9

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

0.125

4

CEPF640/CEBF640

CEFF640

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature .

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .

c.Guaranteed by design, not subject to production testing.

d.Limited only by maximum temperature allowed .

e .Pulse width limited by safe operating area .

f .Full package IS(max) = 10.5A .

g.Full package VSD test condition IS = 10.5A .