RJF0614DSP

Target Specifications

R07DS1127EJ0100 Rev.1.00

Page 2 of 7

Nov 27, 2013

Typical Operation Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Input voltage

VIH

3.5

—

—

V

VIL

—

—

1.2

V

Input current

(Gate non shut down)

IIH1

—

—

100

μA

Vi = 5 V, VDS = 0

IIH2

—

—

50

μA

Vi = 3.5 V, VDS = 0

IIL

—

—

1

μA

Vi = 1.2 V, VDS = 0

Input current

(Gate shut down)

IIH(sd)1

—

0.8

—

mA

Vi = 8 V, VDS = 0

IIH(sd)2

—

0.35

—

mA

Vi = 3.5 V, VDS = 0

Shut down temperature

Tsd

—

175

—

°C

Channel temperature

Return temperature

Thr

—

120

—

°C

Channel temperature

Gate operation voltage

Vop

3.5

—

12

V

Drain current

(Current limitation value)

ID limit

1.5

—

—

A

VGS = 5 V, VDS = 10 V

Note 5

Notes: 5. Pulse test

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain current

ID1

—

—

5.5

A

VGS = 3.5 V, VDS = 10 V

Note 6

ID2

—

—

10

mA

VGS = 1.2 V, VDS =10 V

ID3

1.5

—

—

A

VGS = 5 V, VDS = 10 V

Note 6

Drain to source breakdown voltage

V(BR)DSS

60

—

—

V

ID = 10 mA, VGS = 0

Gate to source breakdown voltage

V(BR)GSS

16

—

—

V

IG = 800

μA, VDS = 0

V(BR)GSS

–2.5

—

—

V

IG = –100

μA, VDS = 0

Gate to source leak current

IGSS1

—

—

100

μA

VGS = 5 V, VDS = 0

IGSS2

—

—

50

μA

VGS = 3.5 V, VDS = 0

IGSS3

—

—

1

μA

VGS = 1.2 V, VDS = 0

IGSS4

—

—

–100

μA

VGS = –2.4 V, VDS = 0

Input current (shut down)

IGS(OP)1

—

0.8

—

mA

VGS = 8 V, VDS = 0

IGS(OP)2

—

0.35

—

mA

VGS = 3.5 V, VDS = 0

Zero gate voltage drain current

IDSS

—

—

10

μA

VDS = 60 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.1

—

2.1

V

ID = 1 mA, VDS = 10 V

Static drain to source on state

resistance

RDS(on)

—

238

297

m

Ω

ID = 0.75 A, VGS = 5 V

Note 6

RDS(on)

—

201

250

m

Ω

ID = 0.75 A, VGS = 10 V

Note 6

Output capacitance

Coss

—

130

—

pF

VDS = 10 V, VGS = 0, f = 1MHz

Turn-on delay time

td(on)

—

1.4

—

μs

ID= 0.75 A, VGS = 5 V,

RL = 43

Ω

Rise time

tr

—

3.1

—

μs

Turn-off delay time

td(off)

—

3.6

—

μs

Fall time

tf

—

1.9

—

μs

Body-drain diode forward voltage

VDF

—

0.8

—

V

IF = 1.5 A, VGS = 0

Body-drain diode reverse recovery

time

trr

—

910

—

ns

IF = 1.5 A, VGS = 0

diF/dt = 50 A/

μs

Over load shut down

operation time

Note 7

tos1

—

0.94

—

ms

VGS = 5 V, VDD = 16 V

tos2

—

0.53

—

ms

VGS = 5 V, VDD = 24 V

Notes: 6. Pulse test

7. Including the junction temperature rise of the over loaded condition.