RJF0619JPD

Target Specifications

R07DS1108EJ0100 Rev.1.00

Page 2 of 7

Sep. 02, 2013

Typical Operation Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Input voltage

VIH

3.5

—

—

V

VIL

—

—

1.2

V

Input current

(Gate non shut down)

IIH1

—

—

100

μA

Vi = 8 V, VDS = 0

IIH2

—

—

50

μA

Vi = 3.5 V, VDS = 0

IIL

—

—

1

μA

Vi = 1.2 V, VDS = 0

Input current

(Gate shut down)

IIH(sd)1

—

0.8

—

mA

Vi = 8 V, VDS = 0

IIH(sd)2

—

0.35

—

mA

Vi = 3.5 V, VDS = 0

Shut down temperature

Tsd

—

175

—

°C

Channel temperature

Gate operation voltage

Vop

3.5

—

12

V

Drain current

(Current limitation value)

ID limt

30

—

—

A

VGS = 5 V, VDS = 10 V

Note 4

Note;

4. Pulse test

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain current

ID1

—

—

45

A

VGS = 3.5 V, VDS = 10 V

Note 5

ID2

—

—

10

mA

VGS = 1.2 V, VDS = 10 V

ID3

30

—

—

A

VGS = 5 V, VDS = 10 V

Note 5

Drain to source breakdown

voltage

V(BR)DSS

60

—

—

V

ID = 10 mA, VGS = 0

Gate to source breakdown

voltage

V(BR)GSS

16

—

—

V

IG = 800

μA, VDS = 0

V(BR)GSS

–2.5

—

—

V

IG = –100

μA, VDS = 0

Gate to source leak current

IGSS1

—

—

100

μA

VGS = 8 V, VDS = 0

IGSS2

—

—

50

μA

VGS = 3.5 V, VDS = 0

IGSS3

—

—

1

μA

VGS = 1.2 V, VDS = 0

IGSS4

—

—

–100

μA

VGS = –2.4 V, VDS = 0

Input current (shut down)

IGS(OP)1

—

0.8

—

mA

VGS = 8 V, VDS = 0

IGS(OP)2

—

0.35

—

mA

VGS = 3.5 V, VDS = 0

Zero gate voltage drain current

IDSS

—

—

10

μA

VDS = 32 V, VGS = 0, Tc = 110

°C

Gate to source cutoff voltage

VGS(off)

1.1

—

2.1

V

VDS = 10 V, ID = 1 mA

Forward transfer admittance

|yfs|

12

27

—

S

ID = 15 A, VDS = 10 V

Note 5

Static drain to source on state

resistance

RDS(on)

—

33

40

m

Ω

ID = 15 A, VGS = 4 V

Note 5

RDS(on)

—

25

30

m

Ω

ID = 15 A, VGS = 10 V

Note 5

Output capacitance

Coss

—

523

—

pF

VDS = 10 V, VGS = 0, f = 1MHz

Turn-on delay time

td(on)

—

3.8

—

μs

VGS = 10 V, ID= 15 A, RL = 2

Ω

Rise time

tr

—

13.5

—

μs

Turn-off delay time

td(off)

—

4.1

—

μs

Fall time

tf

—

7.3

—

μs

Body-drain diode forward

voltage

VDF

—

0.9

—

V

IF = 30 A, VGS = 0

Body-drain diode reverse

recovery time

trr

—

110

—

ns

IF = 30 A, VGS = 0

diF/dt = 50 A/

μs

Over load shut down

operation time

Note 6

tos1

—

0.34

—

ms

VGS = 5 V, VDD = 16 V

tos2

—

0.23

—

ms

VGS = 5 V, VDD = 24 V

Notes: 5. Pulse test

6. Including the junction temperature rise of the over loaded condition.