Nexperia

BAS16LS-Q

High-speed switching diode

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tamb = 25 °C

-

-

715

mV

IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tamb = 25 °C

-

-

855

mV

IF = 50 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tamb = 25 °C

-

-

1

V

VF

forward voltage

IF = 150 mA; tp ≤ 300 µs; δ ≤ 0.02;

Tamb = 25 °C

-

-

1.25

V

VR = 25 V; Tj = 25 °C

-

-

30

nA

VR = 80 V; Tj = 25 °C

-

-

0.5

µA

VR = 25 V; Tj = 150 °C

-

-

30

µA

IR

reverse current

VR = 80 V; Tj = 150 °C

-

-

50

µA

Cd

diode capacitance

VR = 0 V; f = 1 MHz; Tamb = 25 °C

-

-

1.5

pF

trr

reverse recovery time

IF = 10 mA; IR = 10 mA; RL = 100 Ω;

IR(meas) = 1 mA; Tamb = 25 °C

-

-

4

ns

VFRM

peak forward recovery

voltage

IF = 10 mA; tr = 20 ns; Tamb = 25 °C

-

-

1.75

V

006aab132

1

10

102

103

IF

(mA)

10-1

VF (V)

0

1.4

1.0

0.4

0.8

0.2

1.2

0.6

(1) (2) (3) (4)

(1) Tamb = 150 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

(4) Tamb = -40 °C

Fig. 3. Forward current as a function of forward

voltage; typical values

mbg704

10

1

102

IFSM

(A)

10-1

tp (µs)

1

104

103

10

102

Based on square wave currents.

Tj(init) = 25 °C

Fig. 4. Non-repetitive peak forward current as a

function of pulse duration; typical values

BAS16LS-Q

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Product data sheet

18 May 2021

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