BAS21H

©

Nexperia B.V. 2006. All rights reserved.

Product data sheet

Rev. 02 — 3

November 2006

3 of 10

Nexperia

BAS21H

Single high-voltage switching diode

5.

Limiting values

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

[2]

Tj =25 °C prior to surge.

[3]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Reflow soldering is the only recommended soldering method.

[3]

Soldering point of cathode tab.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VRRM

repetitive peak reverse

voltage

-

250

V

VR

reverse voltage

-

200

V

IF

forward current

[1] -

200

mA

IFRM

repetitive peak forward

current

tp = 1 ms;

δ = 0.25

-

625

mA

IFSM

non-repetitive peak forward

current

square wave

[2]

tp =1 µs-

9

A

tp = 100 µs-

3

A

tp =10ms

-

1.7

A

Ptot

total power dissipation

Tamb ≤ 25 °C

[3] -

375

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Tstg

storage temperature

−65

+150

°C

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1][2] -

-

330

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

[3] -

-

70

K/W