BAS16LPQ

Document number: DS43300 Rev. 2 - 2

2 of 5

www.diodes.com

September 2021

© Diodes Incorporated

BAS16LPQ

Maximum Ratings (@ TA = +25°C unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Non-Repetitive Peak Reverse Voltage

VRM

100

V

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

75

V

RMS Reverse Voltage

VR(RMS)

53

V

Forward Continuous Current

IFM

300

mA

Non-Repetitive Peak Forward Surge Current

@ t = 1.0µs

@ t = 1.0s

IFSM

2.0

0.5

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

PD

250

mW

Thermal Resistance Junction to Ambient Air (Note 5)

RθJA

500

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@ TA = +25°C unless otherwise specified.)

Characteristic

Symbol

Min

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 6)

V(BR)R

75



V

IR = 100µA

Forward Voltage

VF



0.715

0.855

1.0

1.25

V

IF = 1.0mA

IF = 10mA

IF = 50mA

IF = 150mA

Leakage Current (Note 6)

IR



1.0

50

30

25

µA

µA

µA

nA

VR = 75V

VR = 75V, TJ = +150°C

VR = 25V, TJ = +150°C

VR = 20V

Total Capacitance

CT



2.0

pF

VR = 0, f = 1.0MHz

Reverse Recovery Time

trr



4.0

ns

IF = IR = 10mA,

Irr = 0.1 x IR, RL = 100Ω

Notes:

5. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.