CEZ6R46 datasheet(1/4 Pages) CET-MOS

Part #	CEZ6R46

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	CET-MOS [CET-MOS Technology Corp.]

Direct Link	https://www.cet-mos.com/en/index.asp

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N-Channel Enhancement Mode Field Effect Transistor

CEZ6R46

FEATURES

60V, 87A, RDS(ON) = 5.5mW @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

Surface mount Package.

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation

VDS

VGS

PD

60

83

348

87

±20

V

W

A

V

1

Lead-free plating ; RoHS compliant.

http://www.cet-mos.com

Rev 1. 2011.Sep

Details are subject to change without notice .

Single Pulsed Avalanche Current e

IAS

60

A

Single Pulsed Avalanche Energy e

EAS

162

mJ

G S S S

D D D D

Drain Current-Continuous

24

A

Drain Current-Pulsed a

96

A

P-PAK 5X6

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Parameter

Symbol

Limit

Units

C/W

1.5

RqJC

Thermal Resistance, Junction-to-Ambient b

C/W

20

RqJA

D

S

G

1

2

3

4

8

7

6

5

ID

IDM

ID

IDM

@

@RqJA

@

RqJC

RqJA

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