D3V3AP2WF

Document number: DS42473 Rev. 1 - 2

2 of 5

www.diodes.com

December 2019

© Diodes Incorporated

D3V3AP2WF

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Peak Pulse Power Dissipation (Note 5) 10/1000µs

8/20µs

PPK

225

1125

W

Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 6)

IFSM

35

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

DC Steady-State Power Dissipation (Note 7)

PD

1.0

W

Thermal Resistance, Junction to Ambient (Note 7)

RθJA

330

°C/W

Thermal Resistance, Junction to Soldering Point (Note 8)

RθJS

70

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Part Number

Reverse

Standoff

Voltage

Breakdown Voltage

VBR @ IT (Note 9)

Test

Current

Maximum

Reverse

Leakage

@ VRWM

Maximum

Clamping

Voltage @ IPP

Maximum Peak

Pulse Current

(Note 5)

Marking

Code

VRWM (V)

Min (V)

Max (V)

IT (mA)

IR (µA)

VC (V)

IPP (A)

D3V3AP2WF-7

3.3

5.2

6.0

10

1000

8.0

28.2

P2A

Notes:

5. Non-Repetitive current pulse as shown in Figure 2.

6. 1/2 sine wave (or equivalent square wave), pulse width = 8.3ms, duty cycle = 4 pulses/minute maximum.

7. Device mounted on 1"

 1", FR-4 PCB; 2 oz. Cu pad layout.

8. Theoretical RJS calculated from the top center of the die straight down to the PCB/cathode tab solder junction.

9. VBR measured at pulse test current IT with tp 5.0ms at TA = +25°C.

0

25

50

75

100

125

150

175 200

100

75

50

25

0

T , AMBIENT TEMPERATURE ( C)

Fig. 1 Pulse Derating Curve

A

°

0

1

2

3

Peak Value I

pp

Half Value I /2

pp

10 X 1000 Waveform

as defined by R.E.A.

t

p

t, TIME (ms)

Fig. 2 Pulse Waveform