1999 Apr 15

2

Philips Semiconductors

Product specification

NPN general purpose transistor

BC337

FEATURES

• High current (max. 500 mA)

• Low voltage (max. 45 V).

APPLICATIONS

• General purpose switching and amplification,

e.g. driver and output stages of audio amplifiers.

DESCRIPTION

NPN transistor in a TO-92; SOT54 plastic package.

PNP complement: BC327.

PINNING

PIN

DESCRIPTION

1

emitter

2

base

3

collector

Fig.1

Simplified outline (TO-92; SOT54) and

symbol.

3

2

MAM182

3

2

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

50

V

collector-emitter voltage

open base

−

45

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

500

mA

peak collector current

−

1A

peak base current

−

200

mA

total power dissipation

−

625

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C