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NXH600B100H4Q2F2SG-R Datasheet(PDF) 2 Page - ON Semiconductor |
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NXH600B100H4Q2F2SG-R Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 19 page ![]() NXH600B100H4Q2F2PG, NXH600B100H4Q2F2SG, NXH600B100H4Q2F2SG−R www.onsemi.com 2 ABSOLUTE MAXIMUM RATINGS (Note 1) TJ = 25°C unless otherwise noted Parameter Symbol Value Unit IGBT (T11, T21, T12, T22, T13, T23) Collector−Emitter Voltage VCES 1000 V Gate−Emitter Voltage Positive Transient Gate*Emitter Voltage (tpulse = 5 ms, D < 0.10) VGE ±20 30 V Continuous Collector Current @ Tc = 80°C IC 192 A Pulsed Peak Collector Current @ Tc = 80°C (TJ = 175°C) IC(Pulse) 576 A Maximum Power Dissipation (TJ = 175°C) Ptot 511 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature (Note 2) TJMAX 175 °C IGBT INVERSE DIODE (D11, D21, D12, D22, D13, D23) Peak Repetitive Reverse Voltage VRRM 1200 V Continuous Forward Current @ Tc = 80°C IF 66 A Repetitive Peak Forward Current (TJ = 175°C) IFRM 198 A Maximum Power Dissipation (TJ = 175°C) Ptot 101 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 175 °C SILICON CARBIDE SCHOTTKY DIODE (D31, D41, D32, D42, D33, D43) Peak Repetitive Reverse Voltage VRRM 1200 V Continuous Forward Current @ Tc = 80°C IF 73 A Repetitive Peak Forward Current (TJ = 175°C) IFRM 219 A Maximum Power Dissipation (TJ = 175°C) Ptot 217 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 175 °C THERMAL PROPERTIES Operating Temperature under Switching Condition TVJOP −40 to 150 °C Storage Temperature Range Tstg −40 to 125 °C INSULATION PROPERTIES Isolation Test Voltage, t = 1 s, 50 Hz Vis 4000 VRMS Creepage Distance 12.7 mm Comparative Tracking Index CTI >600 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. 2. Qualification at 175°C per discrete TO247. |
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