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NXH600B100H4Q2F2SG-R Datasheet(PDF) 2 Page - ON Semiconductor

Part # NXH600B100H4Q2F2SG-R
Description  Q2BOOST Module
PDF  19 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NXH600B100H4Q2F2SG-R Datasheet(HTML) 2 Page - ON Semiconductor

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NXH600B100H4Q2F2PG, NXH600B100H4Q2F2SG, NXH600B100H4Q2F2SG−R
www.onsemi.com
2
ABSOLUTE MAXIMUM RATINGS (Note 1) TJ = 25°C unless otherwise noted
Parameter
Symbol
Value
Unit
IGBT (T11, T21, T12, T22, T13, T23)
Collector−Emitter Voltage
VCES
1000
V
Gate−Emitter Voltage
Positive Transient Gate*Emitter Voltage (tpulse = 5 ms, D < 0.10)
VGE
±20
30
V
Continuous Collector Current @ Tc = 80°C
IC
192
A
Pulsed Peak Collector Current @ Tc = 80°C (TJ = 175°C)
IC(Pulse)
576
A
Maximum Power Dissipation (TJ = 175°C)
Ptot
511
W
Minimum Operating Junction Temperature
TJMIN
−40
°C
Maximum Operating Junction Temperature (Note 2)
TJMAX
175
°C
IGBT INVERSE DIODE (D11, D21, D12, D22, D13, D23)
Peak Repetitive Reverse Voltage
VRRM
1200
V
Continuous Forward Current @ Tc = 80°C
IF
66
A
Repetitive Peak Forward Current (TJ = 175°C)
IFRM
198
A
Maximum Power Dissipation (TJ = 175°C)
Ptot
101
W
Minimum Operating Junction Temperature
TJMIN
−40
°C
Maximum Operating Junction Temperature
TJMAX
175
°C
SILICON CARBIDE SCHOTTKY DIODE (D31, D41, D32, D42, D33, D43)
Peak Repetitive Reverse Voltage
VRRM
1200
V
Continuous Forward Current @ Tc = 80°C
IF
73
A
Repetitive Peak Forward Current (TJ = 175°C)
IFRM
219
A
Maximum Power Dissipation (TJ = 175°C)
Ptot
217
W
Minimum Operating Junction Temperature
TJMIN
−40
°C
Maximum Operating Junction Temperature
TJMAX
175
°C
THERMAL PROPERTIES
Operating Temperature under Switching Condition
TVJOP
−40 to 150
°C
Storage Temperature Range
Tstg
−40 to 125
°C
INSULATION PROPERTIES
Isolation Test Voltage, t = 1 s, 50 Hz
Vis
4000
VRMS
Creepage Distance
12.7
mm
Comparative Tracking Index
CTI
>600
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
2. Qualification at 175°C per discrete TO247.



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