D6V3H1US2LP4

Document number: DS43438 Rev. 2 - 2

2 of 5

www.diodes.com

February 2022

© Diodes Incorporated

D6V3H1US2LP4

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Power Dissipation (Pin1 to Pin2)

PPP

500

W

8/20µs, per Figure 3

Peak Pulse Current (Pin1 to Pin2)

IPP

50

A

8/20µs, per Figure 3

ESD Protection

—Contact Discharge

VESD_CONTACT

±30

kV

IEC 61000-4-2 Standard

ESD Protection

—Air Discharge

VESD_AIR

±30

kV

IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

PD

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

RϴJA

500

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Working Voltage

VRWM

—

—

6.3

V

—

Reverse Current (Note 6)

IR

—

—

0.5

µA



VR = VRWM

Reverse Breakdown Voltage

VBR

6.4

—

9.5

V

IR = 1mA

Reverse Clamping Voltage (Note 7)

VCL

—

7.8

—

V

IPP = 20A, tP = 8/20μs

—

10

—

IPP = 50A, tP = 8/20μs

ESD Clamping Voltage (Note 8)

VC

—

6.5

—

V

IPP = 8A, tP = 100ns

—

6.6

—

IPP = 16A, tP = 100ns

Dynamic Resistance (Note 8)

RDYN

—

0.03

—

Ω

TLP, tP = 100ns

Capacitance

CT

—

130

—

pF

VR = 0V, f = 1MHz

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on

Diodes Incorporated’s suggested pad layout, which can be found on our website at

http://www.diodes.com/package-outlines.html.

6. Short duration pulse test used to minimize self-heating effect.

7. Clamping voltage value is based on an 8x20μs peak pulse current (IPP) waveform.

8. Transmission Line Pulse Test (TLP) settings: tP=100ns, tR=10ns, ITLP and VTLP averaging window is from 70ns to 90ns.