2004 Feb 06

3

Philips Semiconductors

Product specification

NPN general purpose transistors

BC846; BC847; BC848

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board, standard footprint.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board, standard footprint.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BC846

−

80

V

BC847

−

50

V

BC848

−

30

V

collector-emitter voltage

open base

BC846

−

65

V

BC847

−

45

V

BC848

−

30

V

emitter-base voltage

open collector

BC846; BC847

−

6V

BC848

−

5V

collector current (DC)

−

100

mA

peak collector current

−

200

mA

peak base current

−

200

mA

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to

ambient

in free air; note 1

500

K/W