D8V0H1B2LP

Document number: DS40919 Rev. 2 - 2

2 of 5

www.diodes.com

February 2023

© 2023 Copyright Diodes Incorporated. All Rights Reserved.

D8V0H1B2LP

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Power Dissipation

PPP

350

W

8/20µs, See Figure 3

Peak Pulse Current

IPP

20

A

8/20µs, See Figure 3

ESD Protection

– Contact Discharge

VESD_CONTACT

±30

kV

IEC61000-4-2 Standard

ESD Protection

– Air Discharge

VESD_AIR

±30

kV

IEC61000-4-2 Standard

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

PD

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

RJA

500

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-65 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Standoff Voltage

VRWM

—

—

8.0

V

—

Channel Leakage Current (Note 6)

IRM

—

—

200

nA

VRWM = 8V

Breakdown Voltage

VBR

8.5

—

12

V

IR = 1mA

Clamping Voltage, IEC61000-4-5

VCL

—



—

12.0

V

IPP = 1A, tP = 8/20μs

—

—

17.5

IPP = 20A, tP = 8/20μs

ESD Clamping Voltage (Note 7)

VC

—

11.5

—

V

IPP = 4A, tP = 10/100ns

—

14.0

—

IPP = 16A, tP = 10/100ns

Channel Input Capacitance

CT

—

55

—

pF

VR = 0V, f = 1MHz

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporated

’s website at http://www.diodes.com/package-outlines.html.

6. Short duration pulse test used to minimize self-heating effect.

7. Transmission Line Pulse Test (TLP) settings: tp=100ns, tr=10ns, ITLP and VTLP averaging window is from 70ns to 90ns.