1999 May 28

2

Philips Semiconductors

Product specification

NPN Darlington transistors

BC875; BC879

FEATURES

• High DC current gain (min. 1000)

• High current (max. 1 A)

• Low voltage (max. 80 V)

• Integrated diode and resistor.

APPLICATIONS

• Relay drivers.

DESCRIPTION

NPN Darlington transistor in a TO-92 (SOT54) plastic

package. PNP complement: BC878.

PINNING

PIN

DESCRIPTION

1

base

2

collector

3

emitter

Fig.1

Simplified outline (TO-92; SOT54)

and symbol.

handbook, halfpage

MAM307

1

2

3

1

2

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BC875

−

60

V

BC879

−

100

V

collector-emitter voltage

BC875

−

45

V

BC879

−

80

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

1A

peak collector current

−

2A

base current (DC)

−

0.2

A

total power dissipation

−

0.83

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C