Nexperia

BAS316

High-speed switching diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VRRM

repetitive peak reverse

voltage

-

100

V

VR

reverse voltage

-

100

V

IF

forward current

Tj = 25 °C

[1]

-

250

mA

tp = 1 µs; square wave; Tj(init) = 25 °C

-

4

A

tp = 1 ms; square wave; Tj(init) = 25 °C

-

1

A

IFSM

non-repetitive peak

forward current

tp = 1 s; square wave; Tj(init) = 25 °C

-

0.5

A

IFRM

repetitive peak forward

current

tp ≤ 0.5 ms; δ = 0.25

-

500

mA

Ptot

total power dissipation

Tsp ≤ 90 °C

[1] [2]

-

400

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-65

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-side copper, tin-plated and standard footprint.

[2] Soldering point of cathode tab.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-sp)

thermal resistance from

junction to solder point

in free air

[1]

-

-

150

K/W

[1] Soldering point of cathode tab.

BAS316

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Nexperia B.V. 2022. All rights reserved

Product data sheet

1 July 2022

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