Nexperia

BAT32LS

General-purpose Schottky diode

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF = 0.1 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

220

mV

IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

290

mV

IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

360

mV

IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

500

mV

VF

forward voltage

IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

600

mV

IR

reverse current

VR = 30 V; Tamb = 25 °C

-

-

2

µA

Cd

diode capacitance

VR = 1 V; f = 1 MHz; Tamb = 25 °C

-

-

20

pF

006aac596

10- 2

10- 3

1

10- 1

10

IF

(A)

10- 4

VF (V)

0.0

1.4

1.0

1.2

0.8

0.6

0.2

0.4

(1)

(2)

(3)

(4)

(5)

(1) Tamb = 150 °C

(2) Tamb = 125 °C

(3) Tamb = 85 °C

(4) Tamb = 25 °C

(5) Tamb = -40 °C

Fig. 1. Forward current as a function of forward

voltage; typical values

006aac597

10- 5

10- 7

10- 6

10- 3

10- 4

10- 2

IR

(A)

10- 8

VR (V)

0

40

30

10

20

(1)

(2)

(3)

(4)

(1) Tamb = 150 °C

(2) Tamb = 125 °C

(3) Tamb = 85 °C

(4) Tamb = 25 °C

Fig. 2. Reverse current as a function of reverse

voltage; typical values

BAT32LS

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Product data sheet

21 April 2022

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