LMBT2222AWT1G_V01 datasheet(2/5 Pages) LRC

2 / 5 page

General Purpose Transistors NPN Silicon

5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)

OFF CHARACTERISTICS

Characteristic

Collector–Emitter Breakdown Voltage

(IC = 10 mA, IB = 0)

Collector–Base Breakdown Voltage

(IC = 10 μA, IE = 0)

Emitter–Base Breakdown Voltage

(IE = 10 μA, IC = 0)

Collector Cutoff Current

(VCE = 60 V, VBE = 3.0V)

Collector Cutoff Current

(VCB = 60 V, IE = 0)

Emitter Cutoff Current

(VBE = 5.0 V, IC = 0)

Base Cutoff Current

(VCE = 60 V, VEB = 3.0 V)

ON CHARACTERISTICS (Note 1.)

DC Current Gain

(IC = 0.1 mA, VCE = 10 V)

(IC = 1.0 mA, VCE = 10 V)

(IC = 10 mA, VCE = 10 V)

(IC = 150 mA, VCE = 10 V)

(IC = 500 mA, VCE = 10 V)

Collector–Emitter Saturation Voltage(Note 1)

(IC = 150 mA, IB = 15 mA)

(IC = 500 mA, IB = 50 mA)

Base–Emitter Saturation Voltage(Note 1)

(IC = 150 mA, IB = 15 mA)

(IC = 500 mA, IB = 50 mA)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 20mA, VCE= 20V, f = 100MHz)

Output Capacitance

(VCB = 10 V, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB = 0.5 V, IC = 0, f = 1.0 MHz)

ICEX

VCE(sat)

IBL

HFE

100

300

ICBO

0.01

VBR(CBO)

VBR(EBO)

Typ.

Max.

Unit

VBR(CEO)

Symbol

Min.

300

VBE(sat)

Cobo

Cibo

MHz

0.3

0.6

1.2

μA

IEBO

Leshan Radio Company, LTD.

2/5

Rev.A Jun. 2020

LMBT2222AWT1G, S-LMBT2222AWT1G

Collector-Emitter cutoff Current

(VCE = 40V, IB=0)

ICEO

μA

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

Storage Time

Fall Time

1.Pulse Test: Pulse Width ≤

300 μs, Duty Cycle ≤2.0%.

(VCC = 30 V,VEB=-0.5V,

IC = 150mA, IB1 = 15

mA)

(VCC = 30 V, IC = 150

mA,IB1 = IB2 = 15 mA)

225

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