MD2310FX datasheet(3/10 Pages) STMICROELECTRONICS

Part #	MD2310FX

Description	High voltage NPN Power transistor for standard definition CRT display

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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MD2310FX

2 Electrical characteristics

3/10

Electrical characteristics

(TCASE = 25°C; unless otherwise specified)

Table 3.

Electrical characteristics

1 Pulsed duration = 300

µs, duty cycle ≤1.5%.

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE = 0)

VCE = 1500V

Tc= 125°C

0.2

IEBO

Emitter cut-off current

(IC = 0)

VEB = 9V

1mA

VCEO(sus)

Collector-emitter sustaining

voltage (IC = 0)

IC = 100 mA

700

VCE(sat)

Note 1

Collector-emitter saturation

voltage

IC = 7 A

IB = 1.75 A

2.5

VBE(sat)

Note 1

Base-emitter saturation voltage

IC = 7 A

IB = 1.75 A

1.1

hFE

Note 1

DC current gain

IC = 1 A

VCE = 5 V

IC = 7 A

VCE = 1 V

IC = 7 A

VCE = 5 V

5.5

8.5

INDUCTIVE LOAD

Storage time

Fall time

IC = 6A ___ _ _

fh = 64KHz

IB(on) = 0.9A__

VBE(off) = -2.7V

LBB(off) = 1.6µH

2.3

0.12

2.8

0.25

µs

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