1998

©

Document No. D16150EJ1V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

SILICON TRANSISTORS

2SC2958, 2959

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS

DATA SHEET

2002

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

FEATURES

•

Ideal for use of high voltage current such as TV vertical

deflection (drive and output), audio output, pin cushion

correction

•

Complementary transistor with 2SA1221 and 2SA1222

VCEO = 140 V: 2SA1221/2SC2958

VCEO = 160 V: 2SA1222/2SC2959

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

160

V

Collector to emitter voltage

VCEO

140/160

V

Emitter to base voltage

VEBO

5.0

V

Collector current (DC)

IC(DC)

500

mA

Collector current (pulse)

IC(pulse)*1.0

A

Total power dissipation

PT

1.0

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

*PW

≤ 10 ms, duty cycle ≤ 50%

PACKAGE DRAWING (UNIT: mm)

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB = 100 V, IE = 0

200

nA

Emitter cutoff current

IEBO

VEB = 5.0 V, IC = 0

200

nA

DC current gain

hFE **

VCE = 2.0 V, IC = 100 mA

100

150

400

DC base voltage

VBE **

VCE = 5.0 V, IC = 20 mA

0.6

0.64

0.7

V

Collector saturation voltage

VCE(sat) **

IC = 1.0 A, IB = 0.2 A

0.32

0.7

V

Base saturation voltage

VBE(sat) **

IC = 1.0 A, IB = 0.2 A

1.1

1.3

V

Output capacitance

Cob

VCB = 10 V, IE = 0, f = 1.0 MHz

13

30

pF

Gain bandwidth product

fT

VCE = 10 V, IE =

−20 mA

30

60

MHz

** Pulse test PW

≤ 350

µs, duty cycle ≤ 2% per pulsed