D90N03L datasheet(4/16 Pages) STMICROELECTRONICS

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Electrical characteristics

STD90N03L - STD90N03L-1

4/16

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 30V

VDS = 30V, Tc=125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 40A

VGS= 5V, ID= 40A

0.005

0.007

0.0057

0.0011

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1MHz,

VGS=0

2805

549

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15V, ID = 80A

VGS =5V

(see Figure 13)

Gate input resistance

f=1MHz Gate Bias

Bias=0 Test Signal

Level=20mV

open drain

1.2

Ω

Table 5.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD=15V, ID=40A,

RG=4.7Ω, VGS=5V

(see Figure 12)

135

td(off)

Turn-off delay time

Fall time

VDD=15V, ID=40A,

RG=4.7Ω, VGS=5V

(see Figure 12)

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