BCM847BV datasheet(4/15 Pages) PHILIPS

4 / 15 page

BCM847BV_BS_DS_5

Product data sheet

Rev. 05 — 27 June 2006

4 of 15

Philips Semiconductors

BCM847BV/BS/DS

NPN/NPN matched double transistors

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Reﬂow soldering is the only recommended soldering method.

Characteristics

Per device

Rth(j-a)

thermal resistance from

junction to ambient

in free air

SOT666

[1][2] -

416

K/W

SOT363

[1] -

416

K/W

SOT457

[1] -

328

K/W

Table 7.

Thermal characteristics …continued

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 8.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

ICBO

collector-base cut-off

current

VCB =30V;

IE =0A

VCB =30V;

IE =0A;

Tj = 150 °C

µA

IEBO

emitter-base cut-off

current

VEB =5V;

IC =0A

100

hFE

DC current gain

VCE =5V;

IC =10 µA

250

VCE =5V;

IC =2mA

200

290

450

VCEsat

collector-emitter

saturation voltage

IC =10mA;

IB = 0.5 mA

200

IC = 100 mA;

IB =5mA

200

400

VBEsat

base-emitter

saturation voltage

IC =10mA;

IB = 0.5 mA

[1] -

760

IC = 100 mA;

IB =5mA

[1] -

910

VBE

base-emitter voltage

VCE =5V;

IC =2mA

[2] 610

660

710

VCE =5V;

IC =10mA

[2] -

770

collector capacitance

VCB =10V;

IE =ie =0A;

f = 1 MHz

1.5

emitter capacitance

VEB = 0.5 V;

IC =ic =0A;

f = 1 MHz

-11

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