STW220NF75 datasheet(1/8 Pages) STMICROELECTRONICS

Part #	STW220NF75

Description	N-CHANNEL 75V - 0.004OHM - 120A TO-247 STripFET II POWER MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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May 2003

STW220NF75

N-CHANNEL 75V - 0.004

Ω - 120A TO-247

STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.004Ω

s

STANDARD THRESHOLD DRIVE

s

100% AVALANCHE TESTED

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™" strip-

based process. The resulting transistor shows extremely

high packing density for low on-resistance, rugged

avalanche characteristics and less critical alignment

steps

therefore

a

remarkable

manufacturing

reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SWITCHING SPEED

s

AUTOMOTIVE 42V BATTERY SYSTEM

s

OR-ING FUNCTION

TYPE

VDSS

RDS(on)

ID

STW220NF75

75V

<0.0044

Ω

120A(**

)

1

2

3

TO-247

ABSOLUTE MAXIMUM RATINGS

•) Pulse width limited by safe operating area.

(**) Current Limited by Package

(1) ISD ≤120A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 60 A, VDD = 30V

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

75

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

75

V

VGS

Gate- source Voltage

± 20

V

ID(**)

Drain Current (continuous) at TC = 25°C

120

A

ID(**)

Drain Current (continuous) at TC = 100°C

120

A

IDM(•)

Drain Current (pulsed)

480

A

Ptot

Total Dissipation at TC = 25°C

500

W

Derating Factor

3.33

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

10

V/ns

EAS(2)

Single Pulse Avalanche Energy

2500

mJ

Tstg

Storage Temperature

-55 to 175

°C

Tj

Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM

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