MMDF3N02HD

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

20

—

—

29

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

1.0

10

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

—

1.5

4.0

2.0

—

Vdc

mV/

°C

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 3.0 Adc)

(VGS = 4.5 Vdc, ID = 1.5 Adc)

RDS(on)

—

—

0.058

0.074

0.090

0.100

Ohms

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc)

gFS

2.0

3.88

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

455

630

pF

Output Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

184

250

Transfer Capacitance

f = 1.0 MHz)

Crss

—

45

90

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(on)

—

11

22

ns

Rise Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

tr

—

58

116

Turn–Off Delay Time

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(off)

—

17

35

Fall Time

G = 6.0 Ω)

tf

—

20

40

Turn–On Delay Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

td(on)

—

7.0

21

Rise Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

tr

—

32

64

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 6.0 Ω)

td(off)

—

27

54

Fall Time

G = 6.0 Ω)

tf

—

21

42

Gate Charge

See Figure 8

(VDS = 16 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

QT

—

12.5

18

nC

See Figure 8

(VDS = 16 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

Q1

—

1.3

—

(VDS = 16 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

Q2

—

2.8

—

Q3

—

2.4

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage(1)

(IS = 3.0 Adc, VGS = 0 Vdc)

(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

0.79

0.72

1.3

—

Vdc

Reverse Recovery Time

See Figure 15

(IS = 3.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

—

23

—

ns

See Figure 15

(IS = 3.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

ta

—

18

—

(IS = 3.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

tb

—

5.0

—

Reverse Recovery Stored Charge

QRR

—

0.025

—

µC

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.