THS1230CPWR datasheet(6/22 Pages) TI

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ELECTRICAL CHARACTERISTICS (CONTINUED)

1.5 V

BAND

GAP

REFT

REFB

CTB

THS1230

SLAS291B – OCTOBER 2000 – REVISED MARCH 2004

over recommended operating conditions (AV

DD = DVDD = 3.3 V, fs = 30 MHz/50% duty cycle, MODE = 1, 1-V input span,

internal reference, T

min to Tmax) (unless otherwise noted)

REFT, REFB REFERENCE VOLTAGES (all supplies = 3.3 V)

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

INTERNAL REFERENCE(1)

VREFT

Upper reference voltage

2.15

VREFB

Lower reference voltage

1.15

VREF

Differential reference voltage, VREFT – VREFB

0.95

1.05

Differential reference voltage, VREFT – VREFB accuracy

–5%

EXTERNAL REFERENCE

Externally applied VREFT reference voltage range

2.5

Externally applied VREFB reference voltage range

1.05

1.3

Externally applied (VREFT – VREFB) reference voltage range

0.75

1.05

External mode VREFT to VREFB impedance

Ω

INTERNAL OR EXTERNAL REFERENCE

VREFT decoupling capacitor value

0.1

VREFB decoupling capacitor value

0.1

µF

CTB

Decoupling capacitor VREFT to VREFB

(1)

The internal reference voltage is not intended for use driving off chip.

Figure 1. Reference Generation

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