BFG10SLASHX datasheet(5/10 Pages) PHILIPS

5 / 10 page

1995 Aug 31

Philips Semiconductors

Product speciﬁcation

NPN 2 GHz RF power transistor

BFG10; BFG10/X

SPICE parameters for the BFG10 crystal

Note

1. These parameters have not been extracted,

the default values are shown.

SEQUENCE No.

PARAMETER

VALUE

UNIT

2.714

102.8

−

0.998

−

VAF

28.12

IKF

6.009

ISE

403.2

2.937

−

31.01

−

0.999

−

VAR

2.889

IKR

0.284

ISC

1.487

1.100

−

3.500

Ω

IRB

1.000

µA

RBM

3.500

Ω

0.217

Ω

0.196

Ω

19(1)

XTB

0.000

−

20(1)

1.110

21(1)

XTI

3.000

−

CJE

5.125

VJE

0.600

MJE

0.367

−

12.07

XTF

99.40

−

VTF

7.220

ITF

3.950

PTF

0.000

deg

CJC

2.327

VJC

0.668

MJC

0.398

−

XCJC

0.160

−

34(1)

0.000

35(1)

CJS

0.000

36(1)

VJS

750.0

37(1)

MJS

0.000

−

0.652

−

List of components (see Fig.6)

DESIGNATION

VALUE

UNIT

Cbe

Ccb

Cce

191

0.12

0.21

0.06

0.95

0.40

QLB = 50; QLE = 50; QLB,E(f)=QLB,E√(f/fc);

fc = scaling frequency = 100 MHz.

Fig.6 Package equivalent circuit SOT143.

handbook, halfpage

MBC964

L B

L E

C cb

Cbe

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