1996 Jun 04

2

Philips Semiconductors

Product specification

NPN 2 GHz power transistor

BFG11W/X

FEATURES

• High power gain

• High efficiency

• Small size discrete power amplifier

• 1.9 GHz operating area

• Gold metallization ensures excellent reliability

• Linear and non-linear operation.

APPLICATIONS

• Common emitter class-AB operation in handheld radio

equipment at 1.9 GHz such as DECT, PHS.

• Driver for DCS 1800.

DESCRIPTION

NPN silicon planar epitaxial transistor encapsulated in a

plastic 4-pin dual-emitter SOT343 package.

PINNING - SOT343

PIN

DESCRIPTION

1

collector

2

emitter

3

base

4

emitter

Fig.1 Simplified outline.

Marking code: S4

handbook, halfpage

Top view

MBK523

2

1

3

4

QUICK REFERENCE DATA

MODE OF OPERATION

f

(GHz)

(V)

(mW)

(dB)

(%)

Pulsed, class-AB,

1.9

3.6

400

≥6

≥60