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Rev.3-1-12022022

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ESD15VD3BHE3

Symbol

Min.

Typ.

Max.

Units

VRWM

15

V

VBR

16.7

V

IR

1.0

μA

IPP

9

A

VC

24

V

VC

28.5

V

CJ

45

pF

Junction Capacitance

VR=0V, f=1MHz

Reverse Leakage Current

VRWM=15V

Peak Pulse Current

tP=8/20μs

Clamping VoltageNote1

IPP=1A, tP=8/20μs

Electrical Characteristics @ 25°C (Unless Otherwise Specified)

Parameter

Conditions

Reverse Working Voltage

Reverse Breakdown Voltage

IT =1mA

Clamping VoltageNote1

IPP=5A, tP=8/20μs

22

Dynamic Resistance Note2

RDYN

Ω

0.47

TLP, tP=100ns

Note:

1. Non-repetitive current pulse, according to IEC61000-4-5.

2. I/O to Ground, TLP parameter: Z0=50Ω, tp=100ns, tr=2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A.