1998 Mar 11

2

Philips Semiconductors

Product specification

NPN 17 GHz wideband transistor

BFG403W

FEATURES

• Low current

• Very high power gain

• Low noise figure

• High transition frequency

• Very low feedback capacitance.

APPLICATIONS

• Pager front ends

• RF front end

• Wideband applications, e.g. analog and digital cellular

telephones, cordless telephones (PHS, DECT, etc.)

• Radar detectors.

DESCRIPTION

NPN double polysilicon wideband transistor with buried

layer for low voltage applications in a plastic, 4-pin

dual-emitter SOT343R package.

PINNING

PIN

DESCRIPTION

1

emitter

2

base

3

emitter

4

collector

Fig.1 Simplified outline SOT343R.

Marking code: P3.

handbook, halfpage

Top view

MSB842

21

4

3

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

collector-base voltage

open emitter

−−

10

V

collector-emitter voltage

open base

−−

4.5

V

collector current (DC)

−

3

3.6

mA

total power dissipation

−−

16

mW

DC current gain

5080120

feedback capacitance

−

20

−

fF

transition frequency

17

−

GHz

maximum power gain

22

−

dB

F

noise figure

−

1

−

dB

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.