Electronic Components Datasheet Search
  New Zealand  ▼
ALLDATASHEET.CO.NZ

X  

Preview PDF HTML

BFG520/X Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BFG520/X
Description  NPN 9 GHz wideband transistor
PDF  13 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BFG520/X Datasheet(HTML) 2 Page - NXP Semiconductors

  BFG520/X Datasheet HTML 1Page - NXP Semiconductors BFG520/X Datasheet HTML 2Page - NXP Semiconductors BFG520/X Datasheet HTML 3Page - NXP Semiconductors BFG520/X Datasheet HTML 4Page - NXP Semiconductors BFG520/X Datasheet HTML 5Page - NXP Semiconductors BFG520/X Datasheet HTML 6Page - NXP Semiconductors BFG520/X Datasheet HTML 7Page - NXP Semiconductors BFG520/X Datasheet HTML 8Page - NXP Semiconductors BFG520/X Datasheet HTML 9Page - NXP Semiconductors Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 13 page
background image
September 1995
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial
transistors, intended for applications
in the RF frontend in the GHz range,
such as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, pagers and satellite TV
tuners (SATV) and repeater
amplifiers in fibre-optic systems.
The transistors are encapsulated in
4-pin, dual-emitter plastic SOT143
and SOT143R envelopes.
PINNING
PIN
DESCRIPTION
BFG520 (Fig.1) Code: N36
1
collector
2
base
3
emitter
4
emitter
BFG520/X (Fig.1) Code: N42
1
collector
2
emitter
3
base
4
emitter
BFG520/XR (Fig.2) Code: N48
1
collector
2
emitter
3
base
4
emitter
Fig.1 SOT143B.
fpage
Top view
MSB014
12
3
4
Fig.2 SOT143R.
handbook, 2 columns
Top view
MSB035
1
2
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−−
20
V
VCEO
collector-emitter voltage open base
−−
15
V
Ic
DC collector current
−−
70
mA
Ptot
total power dissipation
up to Ts =88 °C; note 1
−−
300
mW
hFE
DC current gain
IC = 20 mA; VCE = 6 V; Tj =25 °C
60
120
250
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
−
0.3
−
pF
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb =25 °C
−
9
−
GHz
GUM
maximum unilateral
power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb =25 °C
−
19
−
dB
IC = 20 mA; VCE = 6 V; f = 2 GHz;
Tamb =25 °C
−
13
−
dB
S
21
2
insertion power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb =25 °C
17
18
−
dB
F
noise figure
Γs = Γopt ; Ic = 5 mA; VCE =6V;
f = 900 MHz; Tamb =25 °C
−
1.1
1.6
dB
Γs = Γopt ; IC = 20 mA; VCE =6 V;
f = 900 MHz; Tamb =25 °C
−
1.6
2.1
dB
Γ
s = Γopt ; IC = 5 mA; VCE = 8 V;
f = 2 GHz; Tamb =25 °C
−
1.9
−
dB



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com