2003 Dec 12

2

NXP Semiconductors

Product data sheet

High-speed diode

BAL99

FEATURES

• Small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage: max. 70 V

• Repetitive peak reverse voltage: max. 70 V

• Repetitive peak forward current: max. 500 mA.

APPLICATIONS

• High-speed switching in e.g. surface mounted circuits.

DESCRIPTION

The BAL99 is a high-speed switching diode fabricated in

planar technology, and encapsulated in the small SOT23

plastic SMD package.

PINNING

PIN

DESCRIPTION

1

not connected

2

cathode

3

anode

handbook, halfpage

21

3

MAM231

1

n.c.

2

3

Fig.1

Simplified outline (SOT23) and symbol.

Marking code:

JFp = made in Hong Kong;

JFt = made in Malaysia;

JFW = made in China.

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

Device mounted on an FR4 printed-circuit board.

TYPE NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

BAL99

−

plastic surface mounted package; 3 leads

SOT23

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VRRM

repetitive peak reverse voltage

−

70

V

VR

continuous reverse voltage

−

70

V

IF

continuous forward current

see Fig.2; note 1

−

215

mA

IFRM

repetitive peak forward current

−

500

mA

IFSM

non-repetitive peak forward current

square wave; Tj = 25 °C prior to surge;

see Fig.4

tp = 1 µs

−

4

A

tp = 1 ms

−

1

A

tp = 1 s

−

0.5

A

Ptot

total power dissipation

Tamb = 25 °C; note 1

−

250

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C