SDT3A45SAF

Document number: DS39774 Rev. 3 - 2

2 of 5

www.diodes.com

December 2019

© Diodes Incorporated

SDT3A45SAF

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VRM

45

V

Average Rectified Output Current

IO

3

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

IFSM

30

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance Junction to Ambient (Note 6)

Thermal Resistance Junction to Ambient (Note 7)

Thermal Resistance Junction to Case (Note 6)

Thermal Resistance Junction to Case (Note 7)

RJA

RJA

RJC

RJC

100

83

66

38

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-65 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Forward Voltage Drop

VF

—

—

—

—

0.37

—

0.48

—

0.40

V

IF = 3.0A, TJ = +25°C

IF = 3.0A, TJ = +100°C

IF = 3.0A, TJ = +125°C

Leakage Current (Note 8)

IR

—

—

—

—

4

—

280

—

80

μA

mA

mA

VR = 45V, TJ = +25°C

VR = 45V, TJ = +100°C

VR = 45V, TJ = +125°C

Notes:

6. FR-4 substrate, 1"*1", 2oz, single-sided, PC boards with 0.06"*0.09" copper pad.

7. FR-4 substrate, 0.4"*0.5", 2oz, single-sided, PC boards with 0.2"*0.25" copper pad.

8. Short duration pulse test used to minimize self-heating effect.