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STM32H7 Datasheet(PDF) 182 Page - STMicroelectronics |
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STM32H7 Datasheet(HTML) 182 Page - STMicroelectronics |
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182 / 357 page ![]() Electrical characteristics (rev Y) STM32H742xI/G STM32H743xI/G 182/357 DS12110 Rev 10 VOHSAT High saturation voltage Iload=max or RLOAD=min(2), Input at VDDA VDDA −100 mV - - mV VOLSAT Low saturation voltage Iload=max or RLOAD=min(2), Input at 0 V -- 100 tWAKEUP Wake up time from OFF state Normal mode CLOAD ≤ 50pf, RLOAD ≥ 4 kΩ(2), follower configuration -0.8 3.2 µs High speed CLOAD ≤ 50pf, RLOAD ≥ 4 kΩ(2), follower configuration -0.9 2.8 PGA gain Non inverting gain value -- 2 - - -- 4 - - -- 8 - - -- 16 - - Inverting gain value -- −1- - -- −3- - -- −7- - -- −15 - - Rnetwork R2/R1 internal resistance values in non-inverting PGA mode(3) PGA Gain=2 - 10/10 - kΩ/ kΩ PGA Gain=4 - 30/10 - PGA Gain=8 - 70/10 - PGA Gain=16 - 150/10 - R2/R1 internal resistance values in inverting PGA mode(3) PGA Gain=-1 - 10/10 - PGA Gain=-3 - 30/10 - PGA Gain=-7 - 70/10 - PGA Gain=-15 - 150/10 - Delta R Resistance variation (R1 or R2) - −15 - 15 % PGA BW PGA bandwidth for different non inverting gain Gain=2 - GBW/2 - MHz Gain=4 - GBW/4 - Gain=8 - GBW/8 - Gain=16 - GBW/16 - Table 99. OPAMP characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit |
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