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STM32H7 Datasheet(PDF) 291 Page - STMicroelectronics |
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STM32H7 Datasheet(HTML) 291 Page - STMicroelectronics |
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291 / 357 page ![]() DS12110 Rev 10 291/357 STM32H742xI/G STM32H743xI/G Electrical characteristics (rev V) 320 7.3.24 Temperature and VBAT monitoring 7.3.25 Voltage booster for analog switch Table 192. VBAT monitoring characteristics Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT -26 - KΩ Q Ratio on VBAT measurement - 4 - - Er(1) 1. Guaranteed by design. Error on Q –10 - +10 % tS_vbat(1) ADC sampling time when reading VBAT input 9 - - µs VBAThigh High supply monitoring - 3.55 - V VBATlow Low supply monitoring - 1.36 - Table 193. VBAT charging characteristics Symbol Parameter Condition Min Typ Max Unit RBC Battery charging resistor VBRS in PWR_CR3= 0 - 5 - KΩ VBRS in PWR_CR3= 1 - 1.5 - Table 194. Temperature monitoring characteristics Symbol Parameter Min Typ Max Unit TEMPhigh High temperature monitoring - 117 - °C TEMPlow Low temperature monitoring - –25 - Table 195. Voltage booster for analog switch characteristics(1) 1. Guaranteed by characterization results. Symbol Parameter Condition Min Typ Max Unit VDD Supply voltage - 1.62 2.6 3.6 V tSU(BOOST) Booster startup time - - - 50 µs IDD(BOOST) Booster consumption 1.62 V ≤ VDD ≤ 2.7 V - - 125 µA 2.7 V < VDD < 3.6 V - - 250 |
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