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APT50GP60B2DF2 Datasheet(PDF) 1 Page - Advanced Power Technology |
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APT50GP60B2DF2 Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 9 page  TYPICAL PERFORMANCE CURVES APT50GP60B2DF2 T-MaxTM G C E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 200 kHz operation @ 400V, 28A • Low Gate Charge • 100 kHz operation @ 400V, 44A • Ultrafast Tail Current shutoff • SSOA rated MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com STATIC ELECTRICAL CHARACTERISTICS MIN TYP MAX 600 3 4.5 6 2.2 2.7 2.1 750 3000 ±100 Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 500µA) Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) Symbol BVCES VGE(TH) VCE(ON) ICES IGES UNIT Volts µA nA Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL APT50GP60B2DF2 600 ±20 ±30 100 72 190 190A@600V 625 -55 to 150 300 UNIT Volts Amps Watts °C Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current 7 @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 150°C Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. POWER MOS 7® IGBT G C E APT50GP60B2DF2 600V |
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