2N6708 datasheet(1/3 Pages) CDIL

Part #	2N6708

Description	PNP SILICON PLANAR EPITAXIAL TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	CDIL [Continental Device India Limited]

Direct Link	http://www.cdilsemi.com

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PNP SILICON PLANAR EPITAXIAL TRANSISTOR

2N6708

TO-237

Plastic Package

General Purpose Medium Power Amplifier

ABSOLUTE MAXIMUM RATINGS(Ta=25ºC)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector Base Voltage

VCBO

60

V

Collector Emitter Voltage

VCEO

45

V

Emitter Base Voltage

VEBO

5V

Collector Current Continuous

IC

1.5

A

Total Power Dissipation

PD

850

mW

Operating And Storage Junction

Tj, Tstg

-55 to +150

ºC

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25 º C Unless Specified Otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

MAX

UNIT

Collector Emitter Voltage

VCEO

IC=10mA, IB=0

45

V

Collector Base Voltage

VCBO

IC=100µA, IE=0

60

V

EmitterBase Voltage

VEBO

IE=10µA, IC=0

5

V

Collector Cut off Current

ICBO

VCB=60V, IE=0

0.1

µA

Emitter Cut off Current

IEBO

VEB=4V, IC=0

0.1

µA

DC Current Gain

hFE

IC=50mA,VCE=2V

40

IC=250mA,VCE=2V

40

250

IC=500mA,VCE=2V

25

Collector Emitter Saturation Voltage

VCE(sat)

IC=500mA,IB=50mA

0.5

V

IC=1A,IB=100mA

1V

Transition Frequency

fT

VCE=10V, IC=50mA,

50

MHz

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

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