IDTTM/ICSTM DDR and SDRAM Buffer

ICS93718

REV E 02/11/07

ICS93718

DDR and SDRAM Buffer

SEL_DDR = 1 DDR/DDR_SDRAM Outputs VDD=2.5, TA = 0 - 85°C; (unless otherwise stated)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

Input High Current

IIH

VI = VDD or GND

110

µA

Input Low Current

IIL

VI

= V

DD or GND

-100

-25

µA

IDD2.5

CL = 0pf, 133MHz

76

200

mA

IDDPD

CL = 0pf, all

310

mA

Output High Current

IOH

VDD = 2.5V

, V

OUT = 1V

-74.5

-18

mA

Output Low Current

IOL

VDD = 2.5V

, V

OUT =

26

42.5

mA

VDD = 2.5V,

VOH = -12mA

VDD = 2.5V

IOH = 12mA

Output differential-pair crossing

voltage

VOC

(VDD/2) –0.1

1.25

(VDD/2) +0.1

V

Input Capacitance

1

CIN

VI = GND or VDD

2pF

1Guaranteed by design, not 100% tested in production.

V

Low-level output voltage

VOL

0.46

2.3

0.35

Operating Supply Current

High-level output voltage

VOH

1.7

SEL_DDR=1 DDR/DDR_SDRAM Outputs = 2.5V, TA = 0 - 85°C (unless otherwise stated)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

VDD3.3_2.5

2.3

2.5

2.7

VDD2.5

2.3

2.5

2.7

Input High Voltage

VIH

SEL_DDR, PD# input

2.0

V

Input Low Voltage

VIL

SEL_DDR, PD# input

0.8

V

Input voltage level

VIN

VDD

V

1Guaranteed by design, not 100% tested in production.

V

Power Supply Voltage

Electrical Characteristics - Input/Supply/Common Output Parameters

Recommended Operating Condition