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SILICON TRANSISTOR

FN4xxx

RESISTOR BUILT-IN TYPE PNP TRANSISTOR

DATA SHEET

Document No. D16491EJ3V0DS00 (3rd edition)

Date Published December 2005 NS CP(K)

Printed in Japan

2002

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

FEATURES

• Compact package

• Resistors built-in type

• Complementary to FA4xxx

ORDERING INFORMATION

PART NUMBER

PACKAGE

FN4xxx

SC-59

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to Base Voltage

VCBO

−60

V

Collector to Emitter Voltage

VCEO

−50

V

Emitter to Base Voltage

VEBO

Note1

V

Collector Current (DC)

IC

−0.1

A

Collector Current (pulse)

Note2

IC(pulse)

−0.2

A

Total Power Dissipation

PT

0.2

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Note 1.

PART NUMBER

VEBO

(V)

MARK

R1

(k

Ω)

R2

(k

Ω)

PART NUMBER

VEBO

(V)

MARK

R1

(k

Ω)

R2

(k

Ω)

FN4A4M

−10

NA1

10.0

10.0

FN4L4L

−15

NK1

47.0

22.0

FN4F4M

−10

NB1

22.0

22.0

FN4A4Z

−5

NL1

10.0

FN4L4M

−10

NC1

47.0

47.0

FN4F4Z

−5

NM1

22.0

FN4L3M

−10

ND1

4.7

4.7

FN4L4Z

−5

NN1

47.0

FN4L3N

−5

NE1

4.7

10.0

FN4F3M

−10

NP1

2.2

2.2

FN4L3Z

−5

NF1

4.7

FN4F3P

−5

NQ1

2.2

10.0

FN4A3Q

−5

NG1

1.0

10.0

FN4F3R

−5

NR1

2.2

47.0

FN4A4P

−5

NH1

10.0

47.0

FN4A4L

−15

NS1

10.0

4.7

FN4F4N

−5

NJ1

22.0

47.0

FN4L4K

−25

NT1

47.0

10.0

Note 2. PW

≤ 10 ms, Duty Cycle ≤ 50%

PACKAGE DRAWING (Unit: mm)

0.95

0.3

0.95

2.9 ± 0.2

1.1 to 1.4

0 to 0.1

0.16

+0.1

–0.06

21

3

+0.1

–0.05

0.4

+0.1

–0.05

0.4

Marking

EQUIVALENT CIRCUIT

2

R1

R2

1

3

PIN CONNECTION

1: Emitter

2: Base

3: Collector

<R>

<R>