IXTP36N30P datasheet(1/5 Pages) IXYS

Part #	IXTP36N30P

Description	PolarHT Power MOSFET

PDF	5 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

300

V

DGR

T

J = 25°C to 150°C; RGS = 1 MΩ

300

V

GSM

±20

V

I

D25

T

C = 25°C36

A

I

DM

T

C = 25°C, pulse width limited by TJM

90

A

I

AR

T

C = 25°C36

A

E

AR

T

C = 25°C30

mJ

E

AS

T

C = 25°C

1.0

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

10

V/ns

T

J ≤ 150°C, RG = 10 Ω

P

D

T

C = 25°C

300

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

Maximum tab temperature for soldering

260

°C

TO-263 package for 10s

M

d

Mounting torque

(TO-3P / TO-220)

1.13/10 Nm/lb.in.

Weight

TO-3P

5.5

g

TO-220

4

g

TO-263

3

g

G = Gate

D = Drain

S = Source

TAB = Drain

DS99155(03/04)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min. Typ.

Max.

V

DSS

V

GS = 0 V, ID = 250 µA

300

V

GS(th)

V

DS = VGS, ID = 250µA

2.5

5.0

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±100

nA

I

DSS

V

DS = VDSS

25

µA

V

GS = 0 V

T

J = 125°C

250

µA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

92

110

m

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

PolarHTTM

Power MOSFET

Advanced Technical Information

N-Channel Enhancement Mode

Features

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

PolarHTTM DMOS transistors

utilize proprietary designs and

process. US patent is pending.

TO-263 (I

XTA)

TO-220 (I

XTP)

TO-3P (IXTQ)

G

D

S

(TAB)

D

(TAB)

G

S

G

S

(TAB)

IXTQ 36N30P

IXTA 36N30P

IXTP 36N30P

V

DSS

=

300

V

I

D25

=

36

A

R

DS(on) =

110 m

Ω

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