BRY62 datasheet(3/12 Pages) PHILIPS

3 / 12 page

1999 Apr 22

Philips Semiconductors

Product speciﬁcation

Silicon controlled switch

BRY62

Notes

1. Provided the IE rating is not exceeded.

2. During switching on, the device can withstand the discharge of a capacitor of a maximum value of 500 pF. This

capacitor is charged when the transistor is in cut-off condition, with a collector supply voltage of 160 V and a series

resistance of 100 k

Ω.

THERMAL CHARACTERISTICS

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Combined device

Ptot

total power dissipation

Tamb ≤ 25 °C

−

250

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Tamb

operating ambient temperature

see Fig.14

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient in free air

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

NPN transistor

ICER

collector cut-off current

VCE =70V; RBE =10kΩ−

100

VCE =70V; RBE =10kΩ; Tj = 150 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V; Tj = 150 °C

−

µA

VCEsat

collector-emitter saturation voltage

IC = 10 mA; IB =1mA

−

500

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB =1mA

−

900

hFE

DC current gain

IC = 10 mA; VCE =2V

−

transition frequency

IC = 10 mA; VCE = 2 V; f = 100 MHz

100

−

MHz

collector capacitance

IE =ie = 0; VCB = 20 V; f = 1 MHz

−

5pF

emitter capacitance

IC =ic = 0; VEB = 1 V; f = 1 MHz

−

PNP transistor

ICEO

collector cut-off current

IB = 0; VCE = −70 V; Tj = 150 °C

−−10

µA

IEBO

emitter cut-off current

IC = 0; VEB = −70 V; Tj = 150 °C

−−10

µA

hFE

DC current gain

IE = 1 mA; VCB = −5V

Combined device

VAK

forward on-state voltage

RKG-K =10kΩ

IA = 50 mA; IAG =0

−

1.4

IA = 50 mA; IAG = 0; Tj = − 55 °C

−

1.9

IA = 1 mA; IAG =10mA

−

1.2

holding current

RKG-K =10kΩ;IAG = 10 mA;

VBB = −2 V; (see Fig.5)

−

1mA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

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