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NB6L14M Datasheet(PDF) 5 Page - ON Semiconductor

Part # NB6L14M
Description  2.5 V/3.3 V 3.0 GHz Differential 1:4 CML Fanout Buffer
PDF  11 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NB6L14M Datasheet(HTML) 5 Page - ON Semiconductor

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NB6L14M
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Table 6. AC CHARACTERISTICS VCC = 2.375 V to 3.63 V, GND = 0 V, TA = −40°C to +85°C (Note 9)
Symbol
Characteristic
Min
Typ
Max
Unit
VOUTPP
Output Voltage Amplitude (@ VINPPmin) (Note 10)
fin ≤ 2.5 GHz
2.5 GHz ≤ fin ≤ 3.0 GHz
180
100
280
200
mV
tPD
Propagation Delay
IN to Q
230
350
480
ps
tS
Set−Up Time (Note 11)
EN to IN, IN
300
ps
tH
Hold Time (Note 11)
EN to IN, IN
300
ps
tSKEW
Within−Device Skew (Note 12)
Device−to−Device Skew (Note 13)
5.0
20
80
ps
tDC
Output Clock Duty Cycle
fin ≤ 3.0 GHz
(Referenced Duty Cycle = 50%)
40
50
60
%
tJITTER
RMS Random Jitter (Note 14)
fIN ≤ 3.0 GHz
Peak−to−Peak Data Dependent Jitter
(Note 15)
fIN ≤ 3.0 GHz
0.2
20
0.5
ps
VINPP
Input Voltage Swing/Sensitivity
(Differential Configuration) (Note 10)
100
2800
mV
tr,tf
Output Rise/Fall Times
(20%−80%)
70
90
150
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
9. Measured by forcing VINPP (minimum) from a 50% duty cycle clock source. All loading with an external RL = 50 W to VCC. Input edge rates
40 ps (20%−80%).
10.Input and output voltage swing is a single−ended measurement operating in differential mode.
11. Set−up and hold times apply to synchronous applications that intend to enable/disable before the next clock cycle. For asynchronous
applications, set−up and hold times do not apply.
12.Within device skew is measured between two different outputs under identical power supply, temperature and input conditions.
13.Device to device skew is measured between outputs under identical transition @ 0.5 GHz.
14.Additive RMS jitter with 50% duty cycle clock signal.
15.Additive peak−to−peak data dependent jitter with input NRZ data at PRBS 23−1 and K28.5 at 2.5 Gb/s.



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