CDBQC0130R-HF

SMD Schottky Barrier Diode

Page 1

REV:A

Comchip Technology CO., LTD.

QW-G1134

Features

- Low reverse current.

- Designed for mounting on small surface.

- Extremely thin / leadless package.

- Majority carrier conduction.

Io = 100 mA

VR = 30 Volts

RoHS Device

Halogen Free

High-Reliability and High-Performance

Dimensions in inches and (millimeter)

0402C/SOD-923F

0.041(1.05)

0.037(0.95)

0.026(0.65)

0.022(0.55)

0.022(0.55)

0.018(0.45)

0.001(0.02)

Max.

0.022(0.55)

0.018(0.45)

0.026(0.65)

BSC.

0.012(0.30)

0.008(0.20)

Mechanical data

- Case: 0402C/SOD-923F standard package,

molded plastic.

- Terminals: Gold plated, solderable per

MIL-STD-750, method 2026.

- Mounting position: Any.

- Weight: 0.001 grams (approx.).

- Polarity: Indicated by cathode band.

Circuit Diagram

Company reserves the right to improve product design , functions and reliability without notice.

A

mA

V

V

1

100

30

35

IO

VR

VRRM

IFSM

8.3ms single half sine-wave superimposed

on rate load (JEDEC method)

Average forward current

Reverse voltage

Repetitive peak reverse voltage

Forward current, surge peak

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Maximum Rating (at TA=25°C unless otherwise noted)

Electrical Characteristics (at TA=25°C unless otherwise noted)

°C

°C

+125

+125

-40

TSTG

Tj

Storage temperature

Junction temperature

mW

125

PD

Power dissipation

µA

V

0.5

0.45

IR

VF

Reverse current

Forward voltage

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

VR = 10V

IF = 10mA

Reverse breakdown voltage

IB = 0.01mA

VB

40

V