CDBQC70-HF

SMD Schottky Barrier Diode

QW-G1137

Page 1

REV:A

Typ

IO

VR(RMS)

VR

VRM

Average forward rectified current

Reverse voltage

Peak reverse voltage

Symbol

Parameter

Conditions

Min

Max

Unit

RMS reverse voltage

mA

V

V

V

70

49

70

70

IFSM

Peak forward surge current

A

0.1

PD

Power dissipation

mW

125

TSTG

Tj

Storage temperature range

Operating temperature range

°C

°C

+125

+125

Symbol

Typ

Parameter

Conditions

Min

Max

Unit

Forward voltage

IF = 15mA

IF = 1mA

VF

V

1

0.41

Reverse current

Capacitance between terminals

Reverse recovery time

VR = 50V

f = 1MHz, and 0 VDC reverse voltage

IF = IR = 10mA, Irr = 0.1 x IR, RL = 100 ohm

IR

CT

Trr

µA

pF

nS

5

2

0.1

Comchip Technology CO., LTD.

Io = 70 mA

VR = 70 Volts

RoHS Device

Halogen Free

-65

Company reserves the right to improve product design , functions and reliability without notice.

Features

Maximum Rating (at TA=25°C unless otherwise noted)

Electrical Characteristics (at TA=25°C unless otherwise noted)

Dimensions in inches and (millimeter)

0402C/SOD-923F

0.041(1.05)

0.037(0.95)

0.026(0.65)

0.022(0.55)

0.022(0.55)

0.018(0.45)

0.001(0.02)

Max.

0.022(0.55)

0.018(0.45)

0.026(0.65)

BSC.

0.012(0.30)

0.008(0.20)

High-Reliability and High-Performance

Circuit Diagram

Mechanical data

- Case: 0402C/SOD-923F standard package,

molded plastic.

- Terminals: Gold plated, solderable per

MIL-STD-750, method 2026.

- Mounting position: Any.

- Weight: 0.001 grams (approx.).

- Polarity: Indicated by cathode band.

-65

8.3ms single half sine-wave superimposed

on rate load (JEDEC method)

- Low reverse current.

- Majority carrier conduction.

- Extremely thin/leadless package.

- Designed for mounting on small surface.