ELECTRICAL CHARACTERISTICS (TA = +25

°C)

(1) Q1

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

−

−

100

nA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0 mA

−

−

100

nA

DC Current Gain

hFE

Note 1

VCE = 3 V, IC = 10 mA

75

110

150

−

Gain Bandwidth Product

fT

VCE = 3 V, IC = 10 mA, f = 2 GHz

10.0

12.0

−

GHz

Insertion Power Gain

S21e2 VCE = 3 V, IC = 10 mA, f = 2 GHz

7.0

11.0

−

dB

Noise Figure

NF

VCE = 3 V, IC = 3 mA, f = 2 GHz,

ZS = Zopt

−

1.5

2.5

dB

Reverse Transfer Capacitance

Cre

Note 2

VCB = 3 V, IE = 0 mA, f = 1 MHz

−

0.4

0.7

pF

(2) Q2

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

−

−

600

nA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0 mA

−

−

600

nA

DC Current Gain

hFE

Note 1

VCE = 1 V, IC = 5 mA

100

120

145

−

Gain Bandwidth Product (1)

fT

VCE = 1 V, IC = 5 mA, f = 2 GHz

3.0

4.5

−

GHz

Gain Bandwidth Product (2)

fT

VCE = 1 V, IC = 15 mA, f = 2 GHz

5.0

6.5

−

GHz

Insertion Power Gain (1)

S21e2 VCE = 1 V, IC = 5 mA, f = 2 GHz

3.0

4.0

−

dB

Insertion Power Gain (2)

S21e2 VCE = 1 V, IC = 15 mA, f = 2 GHz

4.5

5.5

−

dB

Noise Figure

NF

VCE = 1 V, IC = 10 mA, f = 2 GHz,

ZS = Zopt

−

1.9

2.5

dB

Reverse Transfer Capacitance

Cre

Note 2

VCB = 0.5 V, IE = 0 mA, f = 1 MHz

−

0.6

0.8

pF

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

FB

Marking

vY

hFE Value of Q1

75 to 150

hFE Value of Q2

100 to 145

Data Sheet PU10332EJ02V0DS

3

µPA862TS